| Sample ID | PROJ-RRAM-2026-DOE |
| Title | HfOₓ memristor material screening — project planning notebook |
| Status | In progress |
| Operator | Principal Investigator: Dr. S. Aydın |
| Laboratory / Facility | Nano-Device Research Group |
| Tags | planning, DOE, RRAM, memristor, TÜBİTAK |
| Notes | 3 oxygen ratios × 2 top-electrodes = 6 conditions; 8 devices per condition. Design of experiments (DOE). |
| Research Question | How does the oxygen partial pressure in the HfOₓ active layer affect the SET/RESET voltages and the endurance of the RRAM device? |
| Hypothesis | Oxygen-poor (sub-stoichiometric) HfOₓ contains more oxygen vacancies → lower forming voltage but a narrower HRS/LRS window. |
| Expected Result | At an intermediate oxygen ratio (≈8% O₂), the best balance between forming voltage and window ratio; >10⁴ cycle endurance. |
| Independent Variable | O₂ partial pressure during sputtering (4% / 8% / 12%) |
| Dependent Variable | V_SET, V_RESET, R_LRS/R_HRS window, first-failure cycle |
| Control Variable | Bottom electrode (TiN), layer thickness (10 nm), device area (50×50 µm) |
| Item | Supplier | Catalog No | Quantity | Unit Price | Status |
| HfO₂ sputter target 3" | Kurt J. Lesker | EJTHFO2-3 | 1 | €780 | Received |
| TiN-coated Si wafer 4" | University Wafer | TIN-100-525 | 10 | €45 | Received |
| Pt target 2" | Kurt J. Lesker | EJTPT-2 | 1 | €1240 | Ordered |
| Ti target 2" | Kurt J. Lesker | EJTTI-2 | 1 | €210 | In stock |
| Probe tip W (10 µm) | GGB Picoprobe | PP-10 | 4 | €95 | Received |
| Name | Role | Institution | Phone | ORCID | |
| Dr. S. Aydın | Principal Investigator | Nano-Device Group | [email protected] | +90 312 000 0001 | 0000-0002-1111-2222 |
| B. Çelik | PhD student | Nano-Device Group | [email protected] | 0000-0001-3333-4444 | |
| Prof. L. Moreau | Advisor (TEM) | CNRS Grenoble | [email protected] | 0000-0003-5555-6666 |
| Instrument Name | Semiconductor parameter analyzer |
| Model | Keysight B1500A |
| Serial No | MY12345678 |
| Location | Measurement room 2, probe station |
| Calibration Date | 2026-09-30 |
| Settings | Pulsed I-V with the WGFMU module; current compliance 1 mA (forming protection). |
| Reservation / User | Mon/Wed/Fri 09:00–13:00 — B. Çelik |
| Milestone | Start | End | Done |
| Target + wafer procurement | 2026-04-01 | 2026-04-15 | ✓ |
| 6-condition device fabrication | 2026-04-16 | 2026-05-20 | — |
| Electrical screening (forming/endurance) | 2026-05-21 | 2026-06-20 | — |
| TEM cross-section + analysis (Grenoble) | 2026-06-21 | 2026-07-15 | — |
| Manuscript draft | 2026-07-16 | 2026-08-30 | — |
| Source | Destination | Cable / Port | Signal | Note |
| B1500A SMU1 | Top electrode probe | triax — Force | V_program (±5 V) | pulsed source |
| B1500A SMU2 | TiN bottom electrode (chuck) | triax — GND | 0 V / current readback | common ground |
| Probe station | Faraday cage | BNC braid | shielding | noise suppression |
| Authors | Wong H.-S. P. et al. |
| Title | Metal-Oxide RRAM |
| Journal / Publication | Proceedings of the IEEE |
| Year | 2012 |
| DOI | 10.1109/JPROC.2012.2190369 |
| URL | https://ieeexplore.ieee.org/document/6193402 |
| Relevance / Note | Foundational for the forming/SET/RESET mechanism and the oxygen-vacancy filament model. |